| PART |
Description |
Maker |
| CYM74A430PM-60 CYM74S430PM-60 CYM74S431PM-66 CYM74 |
x64 Interleaved Burst Mode SRAM Module
x64 SRAM Module X64的静态存储器模块
|
Cypress Semiconductor, Corp.
|
| R2A20112SPW0 R2A20112SPDD-15 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| R2A20118ASP R2A20118ASPW0 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| R2A20112ASP R2A20112ASP-15 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| HYM5V64214ASLTZG-60 HYM5V64214ASLTZG-80 HYM5V64214 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ON Semiconductor
|
| HB56HW164DB-8A |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Glenair, Inc.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| NU-33B54B-P-A NU-33B54B-R-A |
155 Mbps 1310 nm Burst Mode TX / 622 Mbps 1490 nm Continuous-Mode RX 3.3V, 2X5 SFF Package, Class B B-PON ONU Transceiver
|
Optoway Technology Inc.
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| S75NS128N |
Burst-mode Multiplexed Flash
|
SPANSION
|
